Analysis of on-off current ratio in asymmetrical junctionless double gate MOSFET using high-k dielectric materials
نویسندگان
چکیده
<span>The variation of the on-off current ratio is investigated when asymmetrical junctionless double gate MOSFET fabricated as a SiO<sub>2</sub>/high-k dielectric stacked oxide. The high materials have advantage reducing short channel effect, but rise parasitic due to reduction band offset and poor interface property with silicon has become problem. To overcome this disadvantage, oxide film used. potential distributions are obtained from Poission equation, threshold voltage calculated second derivative method obtain on-current. As result, model agrees results other papers. </span><span>The in proportion arithmetic average upper lower material thicknesses. 10<sup>4</sup> or less shown for SiO<sub>2</sub>, TiO<sub>2</sub> (<em>k</em>=80) increases 10<sup>7</sup> more.</span>
منابع مشابه
Multi-gate Mosfet Structures with High-k Dielectric Materials
Multi-gate MOSFETs has shown better results in subthreshold performances. The replacement of SiO2 by high-k dielectric can fulfill the requirements of Multi-gate MOSFETS with scaling trend in device dimensions. The advancement in fabrication technology has also boosted the use of different high K dielectric materials as oxide layer at different places in MOSFET structures. One of the most impor...
متن کاملInfluence of High-k Gate Dielectric on Nanoscale DG-MOSFET
Influence of dielectric materials as gate oxide on various short channel device parameters using a 2-D device simulator has been studied in this paper. It is found that the use of high-k dielectrics directly on the silicon wafer would degrade the performance. This degradation is mainly due to the fringing field effect developed from gate to source/drain. This fringing field will further generat...
متن کاملChannel thickness dependency of high-k gate dielectric based double-gate CMOS inverter
This work investigates the channel thickness dependency of high-k gate dielectric-based complementary metal-oxide-semiconductor (CMOS) inverter circuit built using a conventional double-gate metal gate oxide semiconductor field-effect transistor (DG-MOSFET). It is espied that the use of high-k dielectric as a gate oxide in n/p DG-MOSFET based CMOS inverter results in a high noise margin as well...
متن کاملPerformance Analysis of Double Gate n-FinFET Using High-k Dielectric Materials
To extend the use of CMOS technology beyond 14 nm node technology, new device materials are required that can enhance the performance of MOSFETs. The use of high-k materials in double gate (DG) MOSFET can triumph over the problem of power dissipation and leakage current. In this paper, we investigated various high-k dielectrics as the gate oxides in a 12 nm SOI FinFET and the performance potent...
متن کاملTCAD Based Analysis of Gate Leakage Current for High-k Gate Stack MOSFET
Scaling of metal-oxide-semiconductor transistors to smaller dimensions has been a key driving force in the IC industry. This work analysis the gate leakage current behavior of nano scale MOSFET based on TCAD simulation. The Sentaurus Simulator simulates the high-k gate stack structure of N-MOSFET for analysis purpose. The impact of interfacial oxide thickness on the gate tunneling current has b...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: International Journal of Electrical and Computer Engineering
سال: 2021
ISSN: ['2088-8708']
DOI: https://doi.org/10.11591/ijece.v11i5.pp3882-3889